Search results for " Nb doped HfO2"

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Synergistic Use of Electrochemical Impedance Spectroscopy and Photoelectrochemical Measurements for Studying Solid State Properties of Anodic HfO2

2017

Within the past years, intense research has been carried out on HfO2 as high k material, promising candidate to replace SiO2 as gate dielectric in CMOS based devices (1), and as metal oxide for resistive random access memory (ReRAM) (2). For both technological applications compact, uniform and flat oxides are necessary, and a detailed understanding of their physical properties as a function of the fabrication conditions is strongly. Hafnia performance can be significantly influenced by carrier trapping taking place at pre-existing precursors states (induced by oxygen vacancies, interstitial ions, impurities acting as dopants), or by self-trapping in a perfect lattice, where the potential we…

EngineeringSettore ING-IND/23 - Chimica Fisica Applicataanodizing HfO2 CMOS ReRAM Electrochemical Impedance Spectroscopy Photoelectrochemical Measurements Solid State Propertiesbusiness.industrySolid-stateAnodizing Hafnium oxide Nb doped HfO2 Electrochemical Impedance Spectroscopy Photocurrent Spectroscopy Solid State Properties CMOS ReRAMNanotechnologybusinessAnodeDielectric spectroscopy
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